| Semester | Course Unit Code | Course Unit Title | T+P+L | Credit | Number of ECTS Credits |
| 5 | EEE 311 | ELECTRONICS-I | 3+0+2 | 4 | 6 |
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Language of Instruction
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English
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Level of Course Unit
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Bachelor's Degree
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Department / Program
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ELECTRICAL-ELECTRONICS E.
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Mode of Delivery
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Face to Face
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Type of Course Unit
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Compulsory
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Objectives of the Course
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Students will learn construction, characteristics, models of semiconductor devices, and analysis & design of transistors amplifiers. In addition, students will gain lab experience.
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Course Content
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Short review of semiconductor physics
Diode junction characteristics
Diode circuits
Bipolar Junction Transistor (BJT)
Characteristics and parameters of BJT
Method of biasing and thermal stabilization of BJT
Field Effect Transistor (FET)(Junction Field Effect Transistor (JFET) and metal oxide field effect transistor (MOSFET))
Biasing of JFET and MOSFET
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Course Methods and Techniques
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Facee to face
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Prerequisites and co-requisities
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( EEE 201 )
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Course Coordinator
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Prof.Dr. Nuran Doğru
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Name of Lecturers
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Asist Prof.Dr. Mehmet Demir
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Assistants
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None
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Work Placement(s)
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No
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Recommended or Required Reading
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Resources
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Electronic Circuit Analysis and Design, Donald A. Neamen
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Course Category
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Mathematics and Basic Sciences
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%10
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Engineering
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%80
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Engineering Design
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%10
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Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"
Assessment Methods and Criteria
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In-Term Studies
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Mid-terms
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2
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%
50
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Practice
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1
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%
10
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Final examination
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1
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%
40
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Total
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4
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%
100
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ECTS Allocated Based on Student Workload
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Activities
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Total Work Load
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Course Duration
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14
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3
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42
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Hours for off-the-c.r.stud
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14
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7
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98
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Mid-terms
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2
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2
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4
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Laboratory
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14
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2
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28
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Final examination
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1
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2
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2
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Total Work Load
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Number of ECTS Credits 6
174
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Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
| No | Learning Outcomes |
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1
| Analysis and design of functional diode circuits |
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2
| Analysis and design of basic electronic circuits (clipper, clamper, rectifier etc.) |
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3
| Analysis and design of basic analog FET (JFET/MOSFET) amplifier configurations |
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4
| Describe the characteristics, biasing techniques, and circuit models of semiconductor devices |
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5
| Formulate problem solving skills of electronic circuits |
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6
| Apply modern simulation tools such as PSPICE for the design, analysis, and performance evaluations of electronic circuits |
Weekly Detailed Course Contents
| Week | Topics | Study Materials | Materials |
| 1 |
Diode; ideal diode
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| 2 |
Zener Diode; Some Applications of Diode
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| 3 |
Clipping (limiting) circuits; Clamping (DC restoration) circuits
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| 4 |
Voltage doubler; Rectifier circuits (half-wave, full-wave)
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| 5 |
Rectifier circuits (half-wave, full-wave)
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| 6 |
Zener Diode Regulator
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| 7 |
1st midterm
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| 8 |
Bipolar Junction Circuits (BJT); DC biasing of BJT
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| 9 |
Bipolar Junction Circuits (BJT); DC biasing of BJT
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| 10 |
Junction Field Effect Transistor (JFET)/ Current voltage characteristics of JFET
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| 11 |
MOSFET biasing/ Current voltage characteristics of MOSFET
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| 12 |
MOSFET biasing/ Current voltage characteristics of MOSFET
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| 13 |
2nd midterm
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| 14 |
Current mirrors
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Contribution of Learning Outcomes to Programme Outcomes
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https://obs.gantep.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=337748&lang=en