| Semester | Course Unit Code | Course Unit Title | T+P+L | Credit | Number of ECTS Credits | Last Updated Date |
| 5 | EEE 311 | ELECTRONICS-I | 3+0+2 | 4 | 6 | 03.04.2026 |
|
Language of Instruction
|
English
|
|
Level of Course Unit
|
Bachelor's Degree
|
|
Department / Program
|
ELECTRICAL-ELECTRONICS E.
|
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Type of Program
|
Formal Education
|
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Type of Course Unit
|
Compulsory
|
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Course Delivery Method
|
Face To Face
|
|
Objectives of the Course
|
Understanding the structure, properties, models of basic semiconductor devices, and the operating conditions/operating regions of transistors
Being able to design circuits
Gaining laboratory experience
|
|
Course Content
|
A brief overview of semiconductor physics
Diode switch characteristics
Diode circuits and applications
Bipolar junction transistor (BJT)
Characteristics and parameters of BJT
Biasing and thermal stabilization method of BJT
Field-effect transistor (FET) (Junction Field-effect transistor (JFET)
and metal oxide semiconductor field-effect transistor (MOSFET))
Biasing of JFET and MOSFET
|
|
Course Methods and Techniques
|
Facee to face
|
|
Prerequisites and co-requisities
|
( EEE 201 )
|
|
Course Coordinator
|
Prof.Dr. Nuran DOĞRU
|
|
Name of Lecturers
|
Asist Prof. Mehmet DEMİR
|
|
Assistants
|
None
|
|
Work Placement(s)
|
No
|
Recommended or Required Reading
|
Resources
|
Electronic Circuit Analysis and Design, Donald A. Neamen
|
Course Category
|
Mathematics and Basic Sciences
|
%10
|
|
|
Engineering
|
%80
|
|
|
Engineering Design
|
%10
|
|
|
Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"
Assessment Methods and Criteria
|
In-Term Studies
|
|
Mid-terms
|
2
|
%
50
|
|
Practice
|
1
|
%
10
|
|
Final examination
|
1
|
%
40
|
|
Total
|
4
|
%
100
|
ECTS Allocated Based on Student Workload
|
Activities
|
Total Work Load
|
|
Course Duration
|
14
|
3
|
42
|
|
Hours for off-the-c.r.stud
|
14
|
7
|
98
|
|
Mid-terms
|
2
|
2
|
4
|
|
Laboratory
|
14
|
2
|
28
|
|
Final examination
|
1
|
2
|
2
|
|
Total Work Load
| |
|
Number of ECTS Credits 6
174
|
Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
| No | Learning Outcomes |
|
1
| Analysis and design of functional diode circuits. |
|
2
| Analysis and design of basic electronic circuits (clippers, clampers, rectifiers, etc.) |
|
3
| Analysis and design of basic analog BJT, FET (JFET/MOSFET) amplifier configurations. |
|
4
| Describing the properties, bias techniques, and circuit models of semiconductor devices. |
|
5
| Developing problem-solving skills related to electronic circuits. |
|
6
| Applying modern simulation tools like PSPICE for the design, analysis, and performance evaluation of electronic circuits. |
Weekly Detailed Course Contents
| Week | Topics | Study Materials | Materials |
| 1 |
Diode; ideal diode
|
|
|
| 2 |
Zener Diode; Some Applications of Diode
|
|
|
| 3 |
Clipping (limiting) circuits; Clamping (DC restoration) circuits
|
|
|
| 4 |
Voltage doubler; Rectifier circuits (half-wave, full-wave)
|
|
|
| 5 |
Rectifier circuits (half-wave, full-wave)
|
|
|
| 6 |
Zener Diode Regulator
|
|
|
| 7 |
1st midterm
|
|
|
| 8 |
Bipolar Junction Circuits (BJT); DC biasing of BJT
|
|
|
| 9 |
Bipolar Junction Circuits (BJT); DC biasing of BJT
|
|
|
| 10 |
Junction Field Effect Transistor (JFET)/ Current voltage characteristics of JFET
|
|
|
| 11 |
MOSFET biasing/ Current voltage characteristics of MOSFET
|
|
|
| 12 |
MOSFET biasing/ Current voltage characteristics of MOSFET
|
|
|
| 13 |
2nd midterm
|
|
|
| 14 |
Current mirrors
|
|
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Contribution of Learning Outcomes to Programme Outcomes
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https://obs.gantep.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=337748&lang=en