Course Information
SemesterCourse Unit CodeCourse Unit TitleT+P+LCreditNumber of ECTS CreditsLast Updated Date
2EEE513INTEGRATED CIRCUIT TECHOLOGY3+0+03616.06.2026

 
Course Details
Language of Instruction English
Level of Course Unit Master's Degree
Department / Program ELECTRICAL AND ELECTRONICS ENGINEERING
Type of Program Formal Education
Type of Course Unit Elective
Course Delivery Method Face To Face
Objectives of the Course The objective of this course is to provide students with a comprehensive understanding of integrated circuit fabrication technologies. Students will learn the fundamental processes involved in semiconductor manufacturing, including wafer preparation, oxidation, diffusion, ion implantation, photolithography, thin-film deposition, etching, metallization, and CMOS process integration.
Course Content Introduction to integrated circuit fabrication technology. Silicon crystal growth and wafer manufacturing. Wafer cleaning and preparation. Thermal oxidation. Diffusion and ion implantation processes. Photolithography techniques. Thin-film deposition methods including Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and epitaxy. Wet and dry etching techniques. Metallization processes. CMOS fabrication technology. Yield and defect analysis. Cleanroom technology and process integration
Course Methods and Techniques Face to face
Prerequisites and co-requisities None
Course Coordinator Prof.Dr. Nuran DOĞRU
Name of Lecturers Prof.Dr. NURAN DOĞRU
Assistants None
Work Placement(s) No

Recommended or Required Reading
Resources Silicon VLSI Technology: Fundamentals, Practice and Modeling,James D. Plummer, Michael D. Deal, Peter B. Griffin
Fundamentals of Modern VLSI Devices, Yuan Taur, Tak H. Ning

Course Category
Mathematics and Basic Sciences %10
Engineering %90

Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"

Assessment Methods and Criteria
In-Term Studies Quantity Percentage
Mid-terms 2 % 60
Final examination 1 % 40
Total
3
% 100

 
ECTS Allocated Based on Student Workload
Activities Quantity Duration Total Work Load
Weekly lecture hours 14 3 42
Presentation preparation 1 5 5
Presentation 1 2 2
Midterm and midterm exam preparation 2 15 30
Final exam and preparation for the final exam 1 35 35
Other (Specify) 14 4 56
Total Work Load   Number of ECTS Credits 6 170

 
Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
NoLearning Outcomes
1 Explains integrated circuit fabrication processes.
2 Describes the stages of silicon wafer manufacturing.
3 Analyzes oxidation and diffusion processes.
4 Evaluates the effects of ion implantation on device characteristics.
5 Explains photolithography processes and mask design principles.
6 Compares thin-film deposition techniques.
7 Selects etching methods according to their application areas.
8 Interprets the CMOS fabrication flow.
9 Analyzes sources of defects and failures in the fabrication process.
10 Applies basic cleanroom rules and practices.

 
Weekly Detailed Course Contents
WeekTopicsStudy MaterialsMaterials
1 Introduction to Integrated Circuit Technology, Semiconductor Materials and Silicon Wafer Manufacturing
2 Crystal Growth Techniques
3 Wafer Preparation and Cleaning Process
4 Thermal Oxidation
5 Diffusion Technology
6 Ion Implantation
7 1st midterm
8 Photolithography Techniques, Thin Film Deposition (CVD, PVD)
9 Epitaxial Growth Technologies
10 Wet and Dry Etching Processes
11 Metallization and Interconnect Technologies
12 CMOS Fabrication Process
13 2ndmidterm
14 Yield, Reliability, and Process Integration

 
Contribution of Learning Outcomes to Programme Outcomes
P1 P2 P3 P4
All 5 5 4 4
C1 5 5 4 4
C2 5 5 4 4
C3 5 5 4 4
C4 5 5 4 4
C5 5 5 4 4
C6 5 5 4 4
C7 5 5 4 4
C8 5 5 4 4
C9 5 5 4 4
C10 5 5 4 4

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  https://obs.gantep.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=147969&lang=en