Course Information
SemesterCourse Unit CodeCourse Unit TitleT+P+LCreditNumber of ECTS CreditsLast Updated Date
2EEE512ADVANCED SEMICONDUCTOR DEVICES II3+0+03612.07.2024

 
Course Details
Language of Instruction English
Level of Course Unit Master's Degree
Department / Program ELECTRICAL AND ELECTRONICS ENGINEERING
Type of Program Formal Education
Type of Course Unit Elective
Course Delivery Method Face To Face
Objectives of the Course Gain deeper and broader knowledge of semiconductor device physics and device operation principles by covering special topics
Course Content Charge coupled devices (CCDs)
MOS memories
Thin-film transistors (TFT)
Metal-semiconductor field effect transistors (MESFETs)
Semiconductor heterostructures (HEMTs)
Heterojunction bipolar transistor (HBT)
Transferred-electron devices/Negative differential resistance and devices
Resonant tunneling and devices
Course Methods and Techniques Face to face
Prerequisites and co-requisities None
Course Coordinator None
Name of Lecturers Prof.Dr. Nuran Doğru
Assistants None
Work Placement(s) No

Recommended or Required Reading
Resources S.M. Szei, K.K. Ng Physics of Semiconductor Devices

Course Category
Mathematics and Basic Sciences %10
Engineering %80
Engineering Design %10

Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"

Assessment Methods and Criteria
In-Term Studies Quantity Percentage
Mid-terms 1 % 60
Final examination 1 % 40
Total
2
% 100

 
ECTS Allocated Based on Student Workload
Activities Quantity Duration Total Work Load
Course Duration 14 3 42
Hours for off-the-c.r.stud 14 8 112
Presentation 2 5 10
Mid-terms 2 2 4
Final examination 1 2 2
Total Work Load   Number of ECTS Credits 6 170

 
Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
NoLearning Outcomes
1 Understand physics of semiconductor devices
2 Understand the operation semiconductor devices
3 Understands pn junctions, metal-semiconductor devices, MOS devices, heterejunction bipolar junction transistors

 
Weekly Detailed Course Contents
WeekTopicsStudy MaterialsMaterials
1 Introduction
2 Charge coupled devices (CCD)
3 MOS Memory
4 Thin-film transistors (TFT)
5 Metal-semiconductor field effect transistors (MESFETs)
6 Semiconductor heterostructures
7 1st midterm
8 Semiconductor heterostructures
9 Heterostructure Field-effect transistor (HEMT)
10 Heterostructure bipolar transistor
11 Transferred-electron devices, Negative differental resistance and Devices
12 2nd midterm
13 Transferred-electron devices, Negative differental resistance and Devices
14 Resonant tunneling and devices

 
Contribution of Learning Outcomes to Programme Outcomes
P1 P2 P3 P4
C1 5 5 3
C2 5 5 3
C3 5 5 3

  bbb

  
  https://obs.gantep.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=147958&lang=en