| Semester | Course Unit Code | Course Unit Title | T+P+L | Credit | Number of ECTS Credits | Last Updated Date |
| 1 | EEE511 | ADVANCED SEMICONDUCTOR DEVICES I | 3+0+0 | 3 | 6 | 12.07.2024 |
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Language of Instruction
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English
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Level of Course Unit
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Master's Degree
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Department / Program
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ELECTRICAL AND ELECTRONICS ENGINEERING
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Type of Program
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Formal Education
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Type of Course Unit
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Elective
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Course Delivery Method
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Face To Face
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Objectives of the Course
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The objective of this course is an advanced understanding of semiconductor physics and the physics and operation of the basic semiconductor devices: pn junctions, metalsemiconductor devices, metal-oxide semiconductor (MOS) capacitors, MOS transistors, and bipolar junction transistors, optoelectroni devices
Content A relatively-broad moderate-depth coverage of semiconductor devices and related topics.
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Course Content
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PN junction
Metal-Semiconductor diode theory
Bipolar Junction Transistor (BJT)
Heterojunction Bipolar Transistor (HBT)
Metal-Oxide-Semiconductor Capacitor (MOS-C)
Field Effect Transistor (MOSFET)
Optoelectronic devices
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Course Methods and Techniques
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Face to face
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Prerequisites and co-requisities
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None
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Course Coordinator
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None
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Name of Lecturers
|
Prof.Dr. Nuran Doğru
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Assistants
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None
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Work Placement(s)
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No
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Recommended or Required Reading
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Resources
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R.F. Pierret, Advanced Semiconductor Fundamentals
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Course Category
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Mathematics and Basic Sciences
|
%10
|
|
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Engineering
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%90
|
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Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"
Assessment Methods and Criteria
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In-Term Studies
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Mid-terms
|
2
|
%
60
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Final examination
|
1
|
%
40
|
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Total
|
3
|
%
100
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ECTS Allocated Based on Student Workload
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Activities
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Total Work Load
|
|
Course Duration
|
14
|
3
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42
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Hours for off-the-c.r.stud
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14
|
8
|
112
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Presentation
|
2
|
5
|
10
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Mid-terms
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2
|
2
|
4
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Final examination
|
1
|
2
|
2
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Total Work Load
| |
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Number of ECTS Credits 6
170
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Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
| No | Learning Outcomes |
|
1
| Understand basic semiconductor fundamentals |
|
2
| Understand the operation/physics of basic semiconductor devices |
|
3
| Understands pn junctions, metal-semiconductor devices, MOS devices, bipolar junction transistors |
|
4
| Understand operation of optoelctronic devices |
Weekly Detailed Course Contents
| Week | Topics | Study Materials | Materials |
| 1 |
Basic Semiconductor Properties
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| 2 |
Elements of Quantum Mechanics
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| 3 |
Energy Band Theory , Equilibrium Carrier Statistics
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| 4 |
Recombination-Generation
Carrier Transport
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| 5 |
p-n junctions
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| 6 |
MS Contacts and Diodes
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| 7 |
1st midterm
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| 8 |
Bipolar Junction Transistors
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| 9 |
Heterojunction Bipolar Transistors
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| 10 |
Metal-Oxide-Semiconductor (MOS) Fundamentals
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| 11 |
MOS Capacitor C-V Characteristics
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| 12 |
2nd midterm
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|
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| 13 |
MOS Field-Effect Transistors (MOSFETs)
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| 14 |
Optoelectronic devices
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Contribution of Learning Outcomes to Programme Outcomes
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https://obs.gantep.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=147923&lang=en