Semester | Course Unit Code | Course Unit Title | T+P+L | Credit | Number of ECTS Credits |
1 | EEE511 | ADVANCED SEMICONDUCTOR DEVICES I | 3+0+0 | 3 | 6 |
Language of Instruction
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English
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Level of Course Unit
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Master's Degree
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Department / Program
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ELECTRICAL AND ELECTRONICS ENGINEERING
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Mode of Delivery
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Face to Face
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Type of Course Unit
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Elective
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Objectives of the Course
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The objective of this course is an advanced understanding of semiconductor physics and the physics and operation of the basic semiconductor devices: pn junctions, metalsemiconductor devices, metal-oxide semiconductor (MOS) capacitors, MOS transistors, and bipolar junction transistors, optoelectroni devices
Content A relatively-broad moderate-depth coverage of semiconductor devices and related topics.
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Course Content
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PN junction Metal-Semiconductor diode theory Bipolar Junction Transistor (BJT) Heterojunction Bipolar Transistor (HBT) Metal-Oxide-Semiconductor Capacitor (MOS-C) Field Effect Transistor (MOSFET) Optoelectronic devices
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Course Methods and Techniques
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Face to face
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Prerequisites and co-requisities
|
None
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Course Coordinator
|
None
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Name of Lecturers
|
Prof.Dr. Nuran Doğru
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Assistants
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None
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Work Placement(s)
|
No
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Recommended or Required Reading
Resources
|
R.F. Pierret, Advanced Semiconductor Fundamentals
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|
|
|
|
|
|
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Course Category
Mathematics and Basic Sciences
|
%10
|
|
Engineering
|
%90
|
|
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Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"
Assessment Methods and Criteria
In-Term Studies
|
Mid-terms
|
2
|
%
60
|
Final examination
|
1
|
%
40
|
Total
|
3
|
%
100
|
ECTS Allocated Based on Student Workload
Activities
|
Total Work Load
|
Course Duration
|
14
|
3
|
42
|
Hours for off-the-c.r.stud
|
14
|
8
|
112
|
Presentation
|
2
|
5
|
10
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Mid-terms
|
2
|
2
|
4
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Final examination
|
1
|
2
|
2
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Total Work Load
| |
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Number of ECTS Credits 6
170
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Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
No | Learning Outcomes |
1
| Understand basic semiconductor fundamentals |
2
| Understand the operation/physics of basic semiconductor devices |
3
| Understands pn junctions, metal-semiconductor devices, MOS devices, bipolar junction transistors |
4
| Understand operation of optoelctronic devices |
Weekly Detailed Course Contents
Week | Topics | Study Materials | Materials |
1 |
Basic Semiconductor Properties
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|
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2 |
Elements of Quantum Mechanics
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|
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3 |
Energy Band Theory , Equilibrium Carrier Statistics
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|
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4 |
Recombination-Generation
Carrier Transport
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5 |
p-n junctions
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|
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6 |
MS Contacts and Diodes
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7 |
1st midterm
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8 |
Bipolar Junction Transistors
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9 |
Heterojunction Bipolar Transistors
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10 |
Metal-Oxide-Semiconductor (MOS) Fundamentals
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11 |
MOS Capacitor C-V Characteristics
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|
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12 |
2nd midterm
|
|
|
13 |
MOS Field-Effect Transistors (MOSFETs)
|
|
|
14 |
Optoelectronic devices
|
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Contribution of Learning Outcomes to Programme Outcomes
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https://obs.gantep.edu.tr/oibs/bologna/progCourseDetails.aspx?curCourse=147923&lang=en